BSS126
SIPMOS® Small-Signal-Transistor
Product Summary
Features
• N-channel
• Depletion mode
V DS
600
V
R DS(on),max
700
Ω
I DSS,min
0.007 A
• dv /dt rated
• Available with VGS(th) indicator on reel
• Pb-free lead plating; RoHS compliant
PG-SOT-23
Type
Package
Pb-free
Tape and Reel Information
Marking
BSS126
PG-SOT-23
Yes
L6327: 3000 pcs/reel
SHs
BSS126
PG-SOT-23
Yes
L6906: 3000 pcs/reel sorted in V GS(th) bands1)
SHs
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Unit
T A=25 °C
0.021
A
T A=70 °C
0.017
I D,pulse
T A=25 °C
0.085
Reverse diode dv /dt
dv /dt
I D=0.016 A,
V DS=20 V,
di /dt =200 A/µs,
T j,max=150 °C
Gate source voltage
V GS
Parameter
Symbol Conditions
Continuous drain current
ID
Pulsed drain current
±20
ESD class
(JESD22-A114-HBM)
P tot
Operating and storage temperature
T j, T stg
T A=25 °C
IEC climatic category; DIN IEC 68-1
Rev. 1.6
kV/µs
V
0 (2|I D|R DS(on)max,
I D=0.01 A
0.008
0.017
-
S
-1.8
-
-1.6
V
K
-1.95
-
-1.75
L
-2.1
-
-1.9
M
-2.25
-
-2.05
N
-2.4
-
-2.2
Transconductance
g fs
Ω
Threshold voltage V GS(th) sorted in bands2)
V GS(th)
J
2)
Rev. 1.6
V DS=3 V, I D=8 µA
Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific
band cannot be ordered separately.
page 2
2009-08-18
BSS126
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
21
28
-
2.4
3.2
Dynamic characteristics
I D=f(V GS); V DS=3 V; T j=25 °C
C iss
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
1.0
1.5
Turn-on delay time
t d(on)
-
6.1
9.2
Rise time
tr
-
9.7
14.5
Turn-off delay time
t d(off)
-
14
21
Fall time
tf
-
115
170
Gate to source charge
Q gs
-
0.05
0.08
Gate to drain charge
Q gd
-
1.2
1.8
Gate charge total
Qg
-
1.4
2.1
Gate plateau voltage
V plateau
-
0.10
-
V
-
-
0.016
A
-
-
0.064
-
0.81
1.2
V
-
160
240
ns
-
13.2
19.8
nC
V GS=-5 V, V DS=25 V,
f =1 MHz
V DD=300 V,
V GS=-3…7 V,
I D=0.01 A, R G=6 Ω
pF
ns
Gate Charge Characteristics
V DD=400 V,
I D=10 mA,
V GS=-3 to 5 V
nC
Reverse Diode
Diode continous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
Rev. 1.6
T A=25 °C
V GS=-5 V, I F=16 mA,
T j=25 °C
V R=300 V, I F=0.01 A,
di F/dt =100 A/µs
page 3
2009-08-18
BSS126
1 Power dissipation
2 Drain current
P tot=f(T A)
I D=f(T A); V GS≥10 V
0.6
0.025
0.5
0.02
0.4
I D [A]
P tot [W]
0.015
0.3
0.01
0.2
0.005
0.1
0
0
0
40
80
120
160
0
40
80
T A [°C]
120
160
T A [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V GS); V DS=3 V; T j=25 °C
Z thJA=f(t p)
parameter: t p
parameter: D =t p/T
10-1
103
10 µs
limited by on-state
resistance
100 µs
1 ms
10-2
I D [A]
Z thJA [K/W]
10 ms
0.5
10
2
0.2
DC
0.1
10-3
0.05
0.02
0.01
10-4
101
10
0
10
1
10
2
10
3
V DS [V]
Rev. 1.6
single pulse
10-4
10-3
10-2
10-1
100
101
102
t p [s]
page 4
2009-08-18
BSS126
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
0.04
1000
V 10
-0.2 V 0 V 0.1 V 0.2 V
-0.1 V
0.5 V
900
V1
V 0.5
800
V 0.2
700
0.03
R DS(on) [Ω]
V 0.1
I D [A]
V0
V 0.1-
0.02
V 0.2-
600
500
1V
400
10 V
300
0.01
200
100
0
0
0
4
8
12
16
0
0.01
V DS [V]
0.02
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); V DS=3 V; T j=25 °C
g fs=f(I D); T j=25 °C
0.04
0.025
0.02
0.02
0.015
0.015
0.015
0.020
I D [A]
g fs [S]
0.025
0.01
0.01
0.005
0.005
0
0
-2
-1
0
1
V GS [V]
Rev. 1.6
0.03
I D [A]
0.000
0.005
0.010
I D [A]
page 5
2009-08-18
BSS126
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D= 0.016mA; V GS=0 V
V GS(th)=f(T j); V DS=3 V; I D = 8 µA
parameter: I D
1600
-1
1400
-1.5
1200
%98
V GS(th) [V]
R DS(on) [Ω]
1000
%98
800
600
typ
-2
-2.5
%2
400
typ
-3
200
0
-3.5
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Threshold voltage bands
12 Typ. capacitances
I D=f(V GS); V DS=3 V; T j=25 °C
C =f(V DS); V GS=-3 V; f =1 MHz
0.1
100
Ciss
0.01
8 µA
N
M
L
K
C [pF]
I D [mA]
10
Coss
J
1
Crss
0.001
-2.5
0.1
-2
-1.5
-1
V GS [V]
Rev. 1.6
0
5
10
15
20
25
30
V DS [V]
page 6
2009-08-18
BSS126
13 Forward characteristics of reverse diode
15 Typ. gate charge
I F=f(V SD)
V GS=f(Q gate); I D=0.1 A pulsed
parameter: T j
parameter: V DD
6
0.1
150 °C
0.2 VDS(max)
25 °C
0.5 VDS(max)
5
4
150 °C, 98%
0.8 VDS(max)
3
2
V GS [V]
I F [A]
25 °C, 98%
0.01
1
0
-1
-2
-3
-4
0.001
0
0.5
1
1.5
2
2.5
V SD [V]
0
0.4
0.8
1.2
1.6
Q gate [nC]
16 Drain-source breakdown voltage
I D=f(V GS); V DS=3 V; T j=25 °C
700
V BR(DSS) [V]
660
620
580
540
500
-60
-20
20
60
100
140
180
T j [°C]
Rev. 1.6
page 7
2009-08-18
BSS126
Package Outline:
Footprint:
Packaging:
Dimensions in mm
Rev. 1.6
page 8
2009-08-18
BSS126
Published by
Infineon Technologies AG
Bereich Kommunikation
St.-Martin-Straße 53
D-81451 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as
warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices, please contact your
nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide
(see address list).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact your nearest Infineon Technologies office.
Infineon Technologies' components may only be used in life-support devices or systems with the
expressed written approval of Infineon Technologies if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.6
page 9
2009-08-18
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